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| 2SK1809 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 1 1. Gate 1. Gate 2. Drain (Flange) 2. Drain (Flange) 3. Source 3. Source 3 1 2 2 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 600 30 5 20 5 60 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1809 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5A VGS = 10 V * ID = 2.5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS = 10 V RL = 12 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 1.1 10 250 3.0 1.5 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3.0 5.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1000 250 45 12 45 105 55 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 500 -- ns -------------------------------------------------------------------------------------- See characteristic curves of 2SK1404 2SK1809 Power vs. Temperature Derating 90 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 30 10 Drain Current I D (A) 10 PW = s 10 0 s 60 1 3 D s m 10 m C O s (1 1 0.3 0.1 0.05 Operation in this area is limited by R DS(on) pe ) ot Sh 30 ra tio n (T c = 25 Ta = 25C 1 3 10 30 100 C ) 0 50 100 150 300 1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 0.01 1 shot Pulse 100 1m 10 m Pulse Width PW (S) 100 m ch - c(t) = s(t) . ch - c ch - c = 2.08C / W, Tc = 25C PW D= T P DM T PW Tc = 25C 1.0 1 10 |
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